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SQD50P06-15L
www.vishay.com
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
2.0
1.8
1.6
V GS = 10 V
I D = 17 A
100
1.4
1.2
1.0
0.8
10
T J = 150 °C
T J = 25 °C
0.6
- 50
- 25
0
25
50
75
100
125
150
175
1
0.0
0.3 0.6 0.9 1.2
1.5
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS (T A = 25 °C, unless otherwise noted)
I DM Limited
100
V SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
10
Limited by R D S (on) *
I D Limited
100 μ s
1 m s
10 m s , 100 m s , 1 s , 10 s , DC
1
0.1
T C = 25 °C
S ingle Pul s e
BVD SS Limited
0.01
0.01
0.1
1
10
100
V D S - Drain-to- S ource Voltage (V)
* V GS > minimum V GS at which R D S (on) i s s pecified
Safe Operating Area
S12-2006-Rev. E, 20-Aug-12
4
Document Number: 69098
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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